PART |
Description |
Maker |
IDT72V70180PF |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 3.3V Power Supply
|
Integrated Device Technology
|
IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
DS2760TA-025 DS2760T-025 DS2760EA-025 DS2760XA-025 |
High Precision Li-Ion Battery Monitor 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16 128 x 128 pixel format, LED or EL Backlight available 122 x 32 pixel format, LED or EL Backlight available
|
http:// DALLAS SEMICONDUCTOR
|
M29W128GH M29W128GL |
128 Mbit 3V Supply Flash Memory
|
Numonyx
|
M29W128GL60N6E M29W128GL60N6F M29W128GL60ZA6E M29W |
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
|
Numonyx B.V
|
HYB25L256160AF HYB25L256160AF-75 HYE25L256160AF HY |
256MBit Mobile-RAM
|
INFINEON[Infineon Technologies AG]
|
K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC14 K4J5 |
256Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
M30L0R7000B0ZAQE M30L0R7000B0ZAQF M30L0R7000B0ZAQT |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
ST Microelectronics
|
M58LR128GT85ZB5 M58LR128GB M58LR128GB85ZB5 M58LR12 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
M30L0R7000XX M30L0R7000B0 M30L0R7000B0ZAQ M30L0R70 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|